Description
IRFP260 MOSFET Transistors IRFP260N 50A 200V N-Channel Power MOSFET IRFP260NP. BOJACK IRFP260N MOSFET is a field effect transistor that can be. Current Id continuous: 50A. Drain current (Id Max): 50A. Transistor type: MOSFET. Current Idm pulse: 200A. Power(Max): 300W. BOJACK IRFP260N MOSFET is a field effect transistor that can be widely used in analog circuits and digital circuits. Basic parameters: The IRFP260N is available in a TO-247AC package On-state resistance Rds(on): 0.04 ohm Voltage Vgs highest: ±20V Number of stitches: 3 Operating Temperature:-55 °C to +175 °C Thermal resistance junction to case A: 2.0°C/W Voltage Vds Typical: 200V Current Id continuous: 50A Current Idm pulse: 200A Surface Mount Device: Through Hole Mounting Lead-free environmental protectionTransistor type: MOSFETTransistor polarity: N-ChannelDrain current (Id Max): 50AVoltage Vds Max: 200VPower(Max): 300W