12Pcs IRFP250 IRFP250N Transistors MOSFET IRFP250NPBF N-Channel 30A 200V
$ 7.64
Description
12Pcs IRFP250 IRFP250N Transistors MOSFET IRFP250NPBF N-Channel 30A 200V. MOSFET IRFP250N TO-247AC N-Channel 200V 30A widely Application: IRFP250 IRFP250N MOSFET Transistors is widely used in various electronic components. 12 x IRFP250N IRFP250 250 n-channel MOSFET transistor. Rated voltage (DC): 200 V Rated current: 30.0 A Drain-source resistance: 75.0 mΩ Polarity: N-Channel Power dissipated: 214 W Product Series: IRFP250N Drain-source voltage (Vds): 200 V Drain-source breakdown voltage: 200V (min) Gate-source breakdown voltage: ±20.0 V Continuous drain current (Ids): 30.0 A Rise time: 43 ns Input capacitance (Ciss): 2159pF @25V(Vds) Fall time: 33 ns Working temperature (Max): 175 ℃ Working temperature (Min): -55 ℃ Dissipated power (Max): 214000 mW Installation method: Through Hole Number of pins: 3 Package include: 12 x IRFP250N IRFP250 250 n-channel MOSFET transistor MOSFET N-CH current Rated: 30A; Voltage Rated: 200V; Pin: 3-Pin(3+Tab)Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A, the high current and voltage ratings provide flexibility across various applications.IRFP250 IRFP250N MOSFET transistors meet the needs of electronic circuits, fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with anextremely efficient and reliable device for use in a wide variety of applicationsMOSFET IRFP250N TO-247AC N-Channel 200V 30A widely Application: IRFP250 IRFP250N MOSFET Transistors is widely used in various electronic componentsThe IRFP250N MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
